Inductively-Coupled Plasma Source

• 2MHz source / 13.56MHz on Table
• Bias voltage 50-200V

Performance

• Etch rates ~ 200 A/min or higher
• Chamber clean frequency to 5000 wafers
• Increases system uptime to 90%
• To reduce particles <10 (@ 1um)

Applications

• Sputter cleaning of the pad metal
• Damage-free cleaning
• Arc Sprayed Aluminum top and side shield
• RF Diode option is available